Application of palladium in ohmic contacts to GaAs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892401" target="_blank" >RIV/60461373:22310/11:43892401 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Application of palladium in ohmic contacts to GaAs
Original language description
Chapter named Application of palladium in ohmic contacts to GaAs deals with studying of parameters of the PdGe contact metallization on N-type GaAs. Significance of this subject results from the fact that the said metallization is nowadays frequently used for formation of ohmic contacts on GaAs. The reason is very good parameters, including above all low contact resistivity and long-term thermal stability. In this chapter there are presented possibilities how improving the parameters of the basic Ge/Pd/GaAs structure by various modifications.
Czech name
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Czech description
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Classification
Type
C - Chapter in a specialist book
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Book/collection name
Palladium: Compounds, Production and Applications
ISBN
978-1-61761-733-1
Number of pages of the result
31
Pages from-to
193-223
Number of pages of the book
356
Publisher name
Nova Science Publishers
Place of publication
Hauppauge, New York
UT code for WoS chapter
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