GaN: Co epitaxial layers grown by MOVPE

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43897462" target="_blank" >RIV/60461373:22310/15:43897462 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/15:00456264
Result on the web
<a href="http://ac.els-cdn.com/S0022024814007167/1-s2.0-S0022024814007167-main.pdf?_tid=3521dd9c-9914-11e4-87e4-00000aab0f6b&acdnat=1420927459_183edf0d1fe1cdfcd244d481f2f30688" target="_blank" >http://ac.els-cdn.com/S0022024814007167/1-s2.0-S0022024814007167-main.pdf?_tid=3521dd9c-9914-11e4-87e4-00000aab0f6b&acdnat=1420927459_183edf0d1fe1cdfcd244d481f2f30688</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.10.031" target="_blank" >10.1016/j.jcrysgro.2014.10.031</a>

Result language
angličtina
Original language name
GaN: Co epitaxial layers grown by MOVPE
Original language description
We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor. Three parameters, the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase, influencing cobalt concentration were investigated. The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co. The magnetic properties of GaN:Co thin films were investigated using superconducting quantum interference device magnetometer. In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy. The concentration of Co was measured using electron microprobe and depth profile was measured using secondary ion mass spectroscopy. Room temperature ferromagnetic ordering was observed on the Co doped GaN layers
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
—

Project
<a href="/en/project/GA13-20507S" target="_blank" >GA13-20507S: Thin films of magnetically doped GaN</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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