Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43899792" target="_blank" >RIV/60461373:22310/15:43899792 - isvavai.cz</a>
Result on the web
<a href="http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05157" target="_blank" >http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05157</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsnano.5b05157" target="_blank" >10.1021/acsnano.5b05157</a>
Alternative languages
Result language
angličtina
Original language name
Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties
Original language description
Layered transition metal dichalcogenides are catalytically important compounds. Unlike the mounting interest in transition metal dichalcogenides such as MoS2 and WS2 for electrochemical applications, other metal chalcogenides with layered structure but different chemical composition have received little attention among the scientific community. One such example is represented by thallium(I) sulfide (Tl2S), a Group 13 chalcogenide, which adopts the peculiar anti-CdCl2 type structure where the chalcogen is sandwiched between the metal layers. This is the exact opposite of a number of transition metal dichalcogenides like 1T-MoS2 adopting the regular CdCl2 structure type. The electronic structure of Tl2S thus differs from MoS2. Such structure may providea useful insight and understanding toward its electrochemical behavior in relation to the electrochemical properties of MoS2. We thus investigated the intrinsic electroactivity of Tl2S and its implications for sensing and energy generatio
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA15-07912S" target="_blank" >GA15-07912S: New 2D layered chalcogenides thin films and 3D nanostructures: Synthesis and characterization</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Nano
ISSN
1936-0851
e-ISSN
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Volume of the periodical
10
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
12
Pages from-to
112-23
UT code for WoS article
000369115800010
EID of the result in the Scopus database
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