Synthesis of graphene on Ni/SiC structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43900941" target="_blank" >RIV/60461373:22310/15:43900941 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Synthesis of graphene on Ni/SiC structure
Original language description
Graphene is a promising material with excellent electrical, thermal, optical and mechanical properties. Therefore, it is a material of high relevance for various applications in many branches of technique. Graphene has received much attention recently in scientific community. The contribution reports formation and characterization of few-layer graphene (FLG) films on a SiC substrate from nickel silicide supersaturated with carbon by annealing at a favourable low temperature.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JJ - Other materials
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů