Shear-force exfoliation of indium and gallium chalcogenides for selective gas sensing applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F19%3A43918002" target="_blank" >RIV/60461373:22310/19:43918002 - isvavai.cz</a>
Result on the web
<a href="https://pubs.rsc.org/en/content/articlehtml/2019/nr/c8nr09294j" target="_blank" >https://pubs.rsc.org/en/content/articlehtml/2019/nr/c8nr09294j</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/c8nr09294j" target="_blank" >10.1039/c8nr09294j</a>
Alternative languages
Result language
angličtina
Original language name
Shear-force exfoliation of indium and gallium chalcogenides for selective gas sensing applications
Original language description
Layered chalcogenides A(III)B(VI) of gallium and indium form a group of semiconducting nanomaterials with huge potential in electronic, sensor and energy storage applications. However, the preparation method predetermines the usage of the prepared nanomaterial. In this paper, we investigated shear-force milling exfoliation in a surfactant free water/ethanol mixture on indium and gallium chalcogenides and their utilization in the gas sensing of volatile organic compounds (VOCs). The exfoliation of bulk materials in a surfactant-free environment helped to avoid any surface contamination and allowed the preparation of materials without non-covalently bonded large organic molecules. Furthermore, the gas-sensing properties were evaluated by electrical impedance spectroscopy on VOCs. Our results showed high sensitivity and selectivity towards methanol. This suggests that shear-force milling is an effective method for the exfoliation of indium and gallium chalcogenides which can find application in the selective gas sensing of VOCs.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/GA17-11456S" target="_blank" >GA17-11456S: Layered transition metal dichalcogenides nanostructures for electrocatalysis</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanoscale
ISSN
2040-3364
e-ISSN
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Volume of the periodical
11
Issue of the periodical within the volume
10
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
4310-4317
UT code for WoS article
000465410200014
EID of the result in the Scopus database
2-s2.0-85062593764