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Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43920437" target="_blank" >RIV/60461373:22310/21:43920437 - isvavai.cz</a>

  • Result on the web

    <a href="https://link.springer.com/article/10.1007/s12274-020-3059-3" target="_blank" >https://link.springer.com/article/10.1007/s12274-020-3059-3</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s12274-020-3059-3" target="_blank" >10.1007/s12274-020-3059-3</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

  • Original language description

    Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi2O2Se crystals, which consist of electrostatically bound [Bi2O2](2+) and [Se](2-) layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of similar to 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi2O2Se APDs also yield high detectivities up to 4.6 x 10(14) Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of similar to 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

    <a href="/en/project/LTAUSA19034" target="_blank" >LTAUSA19034: Two-Dimensional Nanomaterials for Application in Electronic</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Nano Research

  • ISSN

    1998-0124

  • e-ISSN

  • Volume of the periodical

    14

  • Issue of the periodical within the volume

    6

  • Country of publishing house

    CN - CHINA

  • Number of pages

    6

  • Pages from-to

    1961-1966

  • UT code for WoS article

    000571200800001

  • EID of the result in the Scopus database

    2-s2.0-85090987384