Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43920437" target="_blank" >RIV/60461373:22310/21:43920437 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1007/s12274-020-3059-3" target="_blank" >https://link.springer.com/article/10.1007/s12274-020-3059-3</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s12274-020-3059-3" target="_blank" >10.1007/s12274-020-3059-3</a>
Alternative languages
Result language
angličtina
Original language name
Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz
Original language description
Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi2O2Se crystals, which consist of electrostatically bound [Bi2O2](2+) and [Se](2-) layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of similar to 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi2O2Se APDs also yield high detectivities up to 4.6 x 10(14) Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of similar to 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/LTAUSA19034" target="_blank" >LTAUSA19034: Two-Dimensional Nanomaterials for Application in Electronic</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nano Research
ISSN
1998-0124
e-ISSN
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Volume of the periodical
14
Issue of the periodical within the volume
6
Country of publishing house
CN - CHINA
Number of pages
6
Pages from-to
1961-1966
UT code for WoS article
000571200800001
EID of the result in the Scopus database
2-s2.0-85090987384