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Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924144" target="_blank" >RIV/60461373:22310/22:43924144 - isvavai.cz</a>

  • Result on the web

    <a href="https://pubs.rsc.org/en/content/articlehtml/2022/nr/d2nr01013e" target="_blank" >https://pubs.rsc.org/en/content/articlehtml/2022/nr/d2nr01013e</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1039/d2nr01013e" target="_blank" >10.1039/d2nr01013e</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

  • Original language description

    Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly developed optoelectronics. Here we demonstrate the fabrication and characterization of an ITO/n-IGZO/p-GeSe transparent selective wavelength photodetector. The wavelength-dependent photovoltaic behavior of the n-IGZO/p-GeSe heterostructure under UV-Visible laser light shifts the I-V curves down with positive V-oc and negative I-sc values of about 0.12 V and -49 nA and 0.09 V and -17 nA, respectively. Interestingly, when an NIR laser irradiated the device, the I-V curves shifted up with negative V-oc and positive I-sc values of about -0.11 V and 45 nA, respectively. This behavior is attributed to the free carrier concentration induced by photogenerated carriers across the device at different points that varied with the wavelength-dependent photon absorption. Consequently, the direction of the electric field polarity across the junction can be flipped. This study demonstrates a zero-bias near-infrared (NIR) photodetector with a high photoresponsivity of 538.9 mA W-1, a fast rise time of 25.2 ms, and a decay time of 25.08 ms. Furthermore, we observed a detectivity (D) of 8.4 x 10(9) Jones, a normalized photocurrent to dark current ratio (NPDR) of 2.8 x 10(10) W-1, and a noise equivalent power (NEP) of 2.2 x 10(-14) W Hz(-1/2). Our strategy opens alternative possibilities for scalable, low-cost, multifunctional transparent near-infrared photosensors with selective wavelength photodetection.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Nanoscale

  • ISSN

    2040-3364

  • e-ISSN

    2040-3372

  • Volume of the periodical

    14

  • Issue of the periodical within the volume

    30

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

    10910-10917

  • UT code for WoS article

    000827064800001

  • EID of the result in the Scopus database

    2-s2.0-85135058151