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Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924172" target="_blank" >RIV/60461373:22310/22:43924172 - isvavai.cz</a>

  • Result on the web

    <a href="https://pubs.acs.org/doi/full/10.1021/acsnano.2c01151" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acsnano.2c01151</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsnano.2c01151" target="_blank" >10.1021/acsnano.2c01151</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

  • Original language description

    Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal an odd-even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy, and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor. © 2022 American Chemical Society. All rights reserved.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

    <a href="/en/project/LTAUSA19034" target="_blank" >LTAUSA19034: Two-Dimensional Nanomaterials for Application in Electronic</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Nano

  • ISSN

    1936-0851

  • e-ISSN

    1936-086X

  • Volume of the periodical

    16

  • Issue of the periodical within the volume

    8

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    11876-11883

  • UT code for WoS article

    000822467400001

  • EID of the result in the Scopus database

    2-s2.0-85131526563