Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterparts
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924196" target="_blank" >RIV/60461373:22310/22:43924196 - isvavai.cz</a>
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/adom.202200522" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/adom.202200522</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/adom.202200522" target="_blank" >10.1002/adom.202200522</a>
Alternative languages
Result language
angličtina
Original language name
Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterparts
Original language description
Dopant levels in layered compound InSe have considerable potential in optoelectronic devices. Dopant-induced trap states are essential in determining the optoelectrical properties of semiconductors. However, detailed studies of the persistent photoconductivity (PPC) and related mechanism in doped InSe are still not available. Here, the dependence of excitation energy on the shallow donor level caused by the dopants (Ge, Sn) in InSe is systematically investigated. Notably, prolonged decay time originates from extrinsic Ge, Sn dopants and these doping-assisted states improve the optoelectrical performance of pristine InSe. Those photogenerated carriers are trapped in the Ge, Sn shallow impurities states, which are long-lived enough to be extracted into Au contacts before annihilation. This renders Ge-, Sn-doped InSe photoconductive gain and maximized photocurrent. Sn-doped InSe single crystal device can achieve a maximum responsivity of around 1.7 x 10(6) A W-1 under red light and detectivity of 6.18 x 10(13) Jones. In addition, Hall measurements identify the carrier concentration and the Hall mobility of pristine InSe is significantly changed by Ge and Sn dopants. It is demonstrated that doping Ge, Sn atoms is responsible for the obvious photoconductivity and beneficial for the high-performance photodetector, offering intriguing opportunities for novel holographic memory applications.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/LTAUSA19034" target="_blank" >LTAUSA19034: Two-Dimensional Nanomaterials for Application in Electronic</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced optical materials
ISSN
2195-1071
e-ISSN
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Volume of the periodical
10
Issue of the periodical within the volume
20
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
nestrankovano
UT code for WoS article
000832655300001
EID of the result in the Scopus database
2-s2.0-85135122001