Carrier Multiplication and Photoexcited Many-Body States in Solution-Processed 2H-MoSe2
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43931586" target="_blank" >RIV/60461373:22310/25:43931586 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acsnano.4c18254" target="_blank" >https://pubs.acs.org/doi/10.1021/acsnano.4c18254</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsnano.4c18254" target="_blank" >10.1021/acsnano.4c18254</a>
Alternative languages
Result language
angličtina
Original language name
Carrier Multiplication and Photoexcited Many-Body States in Solution-Processed 2H-MoSe2
Original language description
Carrier multiplication (CM), where a single high-energy photon generates multiple electron-hole pairs, offers a promising route to enhance the efficiency of solar cells and photodetectors.Transition metal dichalcogenides, such as 2H-MoTe2 and 2H-WSe2, exhibit efficient CM. Given the similar electronic band structure of 2H-MoSe2, it is expected to show comparable CM efficiency. In this study, we establish the occurrence and efficiency of CM in a solution-processed thin film of bulk-like 2H-MoSe2. We characterize the dynamics of excitons and free charge carriers by using ultrafast transient optical absorption and terahertz spectroscopy. At higher photon energy the efficiency is comparable to literature results for 2H-MoTe2 grown by chemical vapor deposition (CVD) or in bulk crystalline form. At higher photon energies the experimental CM efficiency is reproduced by theoretical modeling. We also observe CM for photon energies below the energetic threshold of twice the band gap, which is most probably due to subgap defect states. Transient optical absorption spectra of 2H-MoSe2 exhibit features of trions from which we infer that photoexcitation leads to free charge carriers. We find no signatures of excitons at the indirect band gap. From analysis of the frequency dependence of the terahertz conductivity we infer that scattering of charge carriers in our sample is less than for CVD grown or bulk crystalline 2H-MoTe2. Our findings make solution-processed 2H-MoSe2 an interesting material for exploitation of CM in photovoltaic devices.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Nano
ISSN
1936-0851
e-ISSN
1936-086X
Volume of the periodical
19
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
12
Pages from-to
10347-10358
UT code for WoS article
001438774700001
EID of the result in the Scopus database
2-s2.0-105001090887