Strain-induced structural and electronic modulation in gas-phase CVD-grown monolayer MoS2 films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932226" target="_blank" >RIV/60461373:22310/25:43932226 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1007/s10854-025-15200-4" target="_blank" >https://link.springer.com/article/10.1007/s10854-025-15200-4</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-025-15200-4" target="_blank" >10.1007/s10854-025-15200-4</a>
Alternative languages
Result language
angličtina
Original language name
Strain-induced structural and electronic modulation in gas-phase CVD-grown monolayer MoS2 films
Original language description
Atomically-thin transition metal dichalcogenides (TMDs) are promising for next-generation flexible electronic devices. Understanding their mechanical behaviour under applied strain is key for practical applications. In this work, we investigated the strain-induced structural and electronic changes in continuous monolayer MoS2 grown by gas-phase chemical vapor deposition. Raman and photoluminescence spectroscopy are employed to in-situ study the MoS2 layers transferred on polycarbonate substrates with PMMA encapsulation. A correlative plot of Raman modes allowed us to distinguish whether changes in both encapsulated and non-encapsulated films are due to strain or n-type doping. The findings highlight the strain sensitivity of monolayer MoS2 and its potential for flexible electronics, offering critical knowledge for developing robust, strain-tolerant devices using gas-phase CVD-grown 2D TMDs.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN
0957-4522
e-ISSN
1573-482X
Volume of the periodical
36
Issue of the periodical within the volume
18
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
nestránkováno
UT code for WoS article
001515170300004
EID of the result in the Scopus database
2-s2.0-105008780996