Vapour pressure of metal-organic precursors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22340%2F03%3A00007828" target="_blank" >RIV/60461373:22340/03:00007828 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Vapour pressure of metal-organic precursors

Original language description

The vapour pressure of four metal-organic precursors, diethylzinc, triethylantimony, trimethylgallium and trimethylaluminium used in the MOVPE processes was measured by a static method in the technologically important temperature range from 238 to 293 K.The experimental data were fitted by the Antoine equation and represent update values of the present day high purity materials providing comparison with the previously published data.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CF - Physical chemistry and theoretical chemistry

OECD FORD branch

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Project

<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

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Volume of the periodical

248

Issue of the periodical within the volume

1

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

9

Pages from-to

99-107

UT code for WoS article

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EID of the result in the Scopus database

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