Laser Photolysis of Trimethoxysilane: Chemical Vapour Deposition of Nanostructured Silicone Powders with Si-H and Si-OCH3 Bonds.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F03%3A54030033" target="_blank" >RIV/61388955:_____/03:54030033 - isvavai.cz</a>
Alternative codes found
RIV/61388980:_____/03:54030033 RIV/67985858:_____/03:54030033
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Laser Photolysis of Trimethoxysilane: Chemical Vapour Deposition of Nanostructured Silicone Powders with Si-H and Si-OCH3 Bonds.
Original language description
Gas-phase photolysis of trimethoxysilane, achieved for the first time by focused ArF laser radiation at 193 nm, yields C-1,C-2 hydrocarbons, methanol and carbon monoxide along with ultrafine nanostructured silicone powder possessing -SiO3 and SiO4 configurations and Si-H and Si-OCH3 bonds. The photolytic process, resulting in efficient removal of the methyl groups, is explained as a multitude of steps involving cleavages of all the available bonds.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Project
<a href="/en/project/OC%20523.60" target="_blank" >OC 523.60: Laser CVD of naked and polymer-encapsulated nano-sized metal particles</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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