Growth of adlayers studied by fluorination of isotopically engineered graphene

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F14%3A00438494" target="_blank" >RIV/61388955:_____/14:00438494 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssb.201451169" target="_blank" >http://dx.doi.org/10.1002/pssb.201451169</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201451169" target="_blank" >10.1002/pssb.201451169</a>

Result language
angličtina
Original language name
Growth of adlayers studied by fluorination of isotopically engineered graphene
Original language description
Chemical vapor deposition on copper is currently one of the most prospective preparation techniques of large area graphene films. There are still many undisclosed questions regarding the growth process and its conditions. The adlayer formation belongs tothose, not only because of the need of uniform monolayers, but also due to the increasing demand for high-coverage bilayers. The combination of Raman spectroscopy, isotopic labeling and functionalization using fluorine can provide the necessary insightinto the CVD growth process. The disorder degree caused by the fluorination is unambiguously distinguished by Raman mapping and evaluation of more than 1000 spectra for the individual layers, suggesting the shielding of the C-13 adlayer underneath the continuous C-12 top layer.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Project
<a href="/en/project/LH13022" target="_blank" >LH13022: Isotopically labeled graphene layers</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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