Temperature-induced strain and doping in monolayer and bilayer isotopically labeled graphene
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F15%3A00449321" target="_blank" >RIV/61388955:_____/15:00449321 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/15:00449321
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.92.125437" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.92.125437</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.92.125437" target="_blank" >10.1103/PhysRevB.92.125437</a>
Alternative languages
Result language
angličtina
Original language name
Temperature-induced strain and doping in monolayer and bilayer isotopically labeled graphene
Original language description
The electronic band structure of graphene is strongly dependent on the amount of strain and/or doping present. We performed a comprehensive study of temperature-dependent strain and doping in isotopically labelled graphene mono- and bilayers on a SiO2/Si substrate by Raman spectral mapping at well-defined temperatures between 300 and 10 K. The principal Raman active modes of the graphene (G, 2D) were subjected to correlation analysis, which enabled reliable separation of the strain and doping contributions. The influence of strain on the monolayer and top and bottom layers of the bilayer graphene is large and shows a pronounced temperature-dependent variation. Temperature dependence of the doping is clearly present in both layers, suggesting equalization of the captured charge in the bilayer down to low temperatures.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LL1301" target="_blank" >LL1301: From Graphene Hybrid Nanostructures to Green Electronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review. B
ISSN
1098-0121
e-ISSN
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Volume of the periodical
92
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
"125437-1"-"125437-9"
UT code for WoS article
000361801900007
EID of the result in the Scopus database
2-s2.0-84944096785