Experimental and Theoretical Comparative Study of Monolayer and Bulk MoS2 under Compression

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F15%3A00466947" target="_blank" >RIV/61388955:_____/15:00466947 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Experimental and Theoretical Comparative Study of Monolayer and Bulk MoS2 under Compression

Original language description

Recently, a new family of 2D materials with exceptional optoelectronic properties has stormed into the scene of nanotechnology, the transition metal dichalcogenides (e.g., MoS2). In contrast with graphene, which is a zero band gap semiconductor, many of the single layered materials from this family show a direct band-gap in the visible range. This band-gap can be tuned by several factors, including the thickness of the sample; the transition from a direct to indirect semiconductor state takes place in MoS2 when increasing the number of layers from 1 towards the bulk. Applying strain/stress has been revealed as another tool for promoting changes in the electronic structure of these materials; however, only a few experimental works exist for MoS2. In this work we present a comparative study of single layered and bulk MoS2 subjected to direct out-of-plane compression, using high pressure anvil cells and monitoring with non-resonant Raman spectroscopy; accompanying the results with theoretical DFT studies. In the case of monolayer MoS2 we observe transitions from direct to indirect band-gap semiconductor and to semimetal, analogous to the transitions observed under hydrostatic pressure, but promoted at more accessible pressure ranges (similar to 25 times lower pressure). For bulk MoS2, both regimes, hydrostatic and uniaxial, lead to the semimetallization at similar pressure values, around 30 GPa. Our calculations reveal different driving forces for the metallization in bulk and monolayer samples.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

CG - Electrochemistry

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

NANOCON 2015: 7th International Conference, Papers - Full Texts

ISBN

978-80-87294-59-8

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

45-50

Publisher name

TANGER, spol. s r.o

Place of publication

Ostrava

Event location

Brno

Event date

Oct 14, 2015

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000374708800006