Electrochemical charging of the single-layer graphene membrane

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00468135" target="_blank" >RIV/61388955:_____/16:00468135 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssb.201600191" target="_blank" >http://dx.doi.org/10.1002/pssb.201600191</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201600191" target="_blank" >10.1002/pssb.201600191</a>

Result language
angličtina
Original language name
Electrochemical charging of the single-layer graphene membrane
Original language description
In situ Raman spectroelectrochemistry has been applied to study chemical vapor-deposition-grown single-layer graphene membrane on a patterned SiO2/Si substrate. The SiO2/Si substrate is known to dope graphene, thus the substrate can significantly influence the properties of the graphene during electrochemical charging. We analyzed the change of the Raman intensity of the G mode as a function of electrode potential for a single-layer graphene membrane and we compared the results to those obtained for the same graphene sample on a substrate. Because of the elimination of the influence of a supporting substrate we have been able to achieve more efficient doping of graphene by applied electrode potentials. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CG - Electrochemistry
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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