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Highly Efficient Bulk-Crystal-Sized Exfoliation of 2D Materials under Ultrahigh Vacuum

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F24%3A00585020" target="_blank" >RIV/61388955:_____/24:00585020 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11320/24:10481768

  • Result on the web

    <a href="https://hdl.handle.net/11104/0352789" target="_blank" >https://hdl.handle.net/11104/0352789</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsaelm.3c01824" target="_blank" >10.1021/acsaelm.3c01824</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Highly Efficient Bulk-Crystal-Sized Exfoliation of 2D Materials under Ultrahigh Vacuum

  • Original language description

    In the realm of materials science and nanotechnology, the pursuit of the scalable preparation of high-quality monolayers of two-dimensional (2D) materials is a significant challenge. Despite the widespread interest sparked by the unique quantum mechanical effects in these materials, achieving scalable and controlled syntheses remains hindered by a lack of suitable techniques. This work presents a facile exfoliation approach that successfully yields bulk-crystal-sized 2D monolayers, approaching 100% under ultrahigh vacuum (UHV) conditions. The process was demonstrated by exfoliating MoS2 on Au and Ag substrates. Raman spectroscopy reveals a strong dispersive interaction at the metal/MoS2 interface, inducing a high strain field on the topmost layer of the bulk crystal. This strain field's inhomogeneous distribution reduces interlayer van der Waals interactions, enhancing the selectivity of monolayer exfoliation. Beyond scalable exfoliation, our method opens avenues for obtaining monolayers of materials unstable under ambient conditions, emphasizing its broader applicability in advancing the synthesis of 2D materials for diverse applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10403 - Physical chemistry

Result continuities

  • Project

    <a href="/en/project/GX20-08633X" target="_blank" >GX20-08633X: ÅrchitectRonics of Two-dimensional crystals via synergy of chiral electro-chemical and opto-electronic concepts on Å-scale</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Applied Electronic Materials

  • ISSN

    2637-6113

  • e-ISSN

    2637-6113

  • Volume of the periodical

    6

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    2301-2308

  • UT code for WoS article

    001192441900001

  • EID of the result in the Scopus database

    2-s2.0-85189083161