Spinristor: A Spin-Filtering Memristor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F23%3A00573719" target="_blank" >RIV/61388963:_____/23:00573719 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14310/23:00133214 RIV/00216208:11310/23:10471468
Result on the web
<a href="https://doi.org/10.1002/aelm.202300360" target="_blank" >https://doi.org/10.1002/aelm.202300360</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/aelm.202300360" target="_blank" >10.1002/aelm.202300360</a>
Alternative languages
Result language
angličtina
Original language name
Spinristor: A Spin-Filtering Memristor
Original language description
In this paper, an in silico proof of concept of a spinristor is proposed and provided, a new electronic component that combines a spin-filter and a memristor in a single molecule, useful for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin- and electronic-polarization induced by the enclosed open-shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source–drain electrodes, VSD. The position of the encapsulated ion can be switched by a high VSD which leads to a change in the direction of the rectification and the spin-filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin-filter, therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin-filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors knowledge, spinristor has no macroscopic counterpart in electronics, so far.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
<a href="/en/project/GA21-17806S" target="_blank" >GA21-17806S: Endohedral Fullerenes for Molecular Components: Memristors and Spinristors</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Electronic Materials
ISSN
2199-160X
e-ISSN
2199-160X
Volume of the periodical
9
Issue of the periodical within the volume
8
Country of publishing house
DE - GERMANY
Number of pages
9
Pages from-to
2300360
UT code for WoS article
001023181100001
EID of the result in the Scopus database
2-s2.0-85163981348