Electrosynthesis of Ru (II)-Polypyridyl Oligomeric Films on ITO Electrode for Two Terminal Non-Volatile Memory Devices and Neuromorphic Computing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F25%3A00637629" target="_blank" >RIV/61388963:_____/25:00637629 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1002/smtd.202401911" target="_blank" >https://doi.org/10.1002/smtd.202401911</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/smtd.202401911" target="_blank" >10.1002/smtd.202401911</a>
Alternative languages
Result language
angličtina
Original language name
Electrosynthesis of Ru (II)-Polypyridyl Oligomeric Films on ITO Electrode for Two Terminal Non-Volatile Memory Devices and Neuromorphic Computing
Original language description
Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 x 0.7 cm(2)) two terminal molecular junctions. The molecular junctions exhibit non-volatile resistive switching at a relatively lower operational voltage, +/- 1 V, high ON/OFF electrical current ratio (approximate to 10(3)), low-energy consumption (SET/RESET = 27.94/14400 nJ), good cyclic stability (>300 cycles), and switching speed (SET/RESET = 25 ms/20 ms). A computational study suggests that accessible frontier molecular orbitals of metal-complex to the Fermi level of ITO electrodes facilitate charge transport at a relatively lower bias followed by a filamentformation. An extensive analysis is performed of the performance of binary neural networks exploiting the current-voltage features of the devices as binary synaptic weights and exploring their potential for neuromorphic logic-in-memory implementation of IMPLICATION (IMPLY) operation which can realize universal gates. The comprehensive analysis indicates that the proposed redox-active complex-based memory device may be a promising candidate for high-density data storage, energy-efficient implementation of neuromorphic networks with software-level accuracy, and logic-in-memory implementations.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Small Methods
ISSN
2366-9608
e-ISSN
2366-9608
Volume of the periodical
9
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
14
Pages from-to
2401911
UT code for WoS article
001404448300001
EID of the result in the Scopus database
2-s2.0-85216086764