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Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F22%3A00556898" target="_blank" >RIV/61388980:_____/22:00556898 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/22:00562898 RIV/61389005:_____/22:00556898 RIV/68407700:21110/22:00361587

  • Result on the web

    <a href="https://doi.org/10.1080/10420150.2022.2049788" target="_blank" >https://doi.org/10.1080/10420150.2022.2049788</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1080/10420150.2022.2049788" target="_blank" >10.1080/10420150.2022.2049788</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam

  • Original language description

    Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Radiation Effects and Defects in Solids

  • ISSN

    1042-0150

  • e-ISSN

    1029-4953

  • Volume of the periodical

    177

  • Issue of the periodical within the volume

    1-2

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    24

  • Pages from-to

    137-160

  • UT code for WoS article

    000770467000001

  • EID of the result in the Scopus database

    2-s2.0-85126828743