Epitaxial rectrystalization of the Ni/MgO(001)interface.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F02%3A49033141" target="_blank" >RIV/61389005:_____/02:49033141 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Epitaxial rectrystalization of the Ni/MgO(001)interface.

Original language description

Process of recrystallization of the epitaxially grown Ni layer deposited on the MgO(001) single crystal is studied. Thin Ni layer prepared by the vapor deposition of Ni on the MgO substrate kept were annealed between 500 and 1000 0C and systematically analyzed by Rutherford backscattering, X-ray diffraction and atomic force microscopy. Dramatic change in evolution of the crystalline quality was observed during the thermal treatment. The strain and defect density gradually decreased and at the temperature 1000 0C the strain-free Ni/MgO(001) interface was obtained.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Epitaxial rectrystalization of the Ni/MgO(001)interface.

ISBN

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ISSN

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e-ISSN

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Number of pages

3

Pages from-to

389-391

Publisher name

N/A

Place of publication

Plzeň

Event location

Plzeň [CZ]

Event date

Sep 9, 2002

Type of event by nationality

CST - Celostátní akce

UT code for WoS article

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