Early stages of growth of gold layers sputter deposited on glass and silicon substrates

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F12%3A00382704" target="_blank" >RIV/61389005:_____/12:00382704 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22310/12:43894040

Result on the web

<a href="http://dx.doi.org/10.1186/1556-276X-7-241" target="_blank" >http://dx.doi.org/10.1186/1556-276X-7-241</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1186/1556-276X-7-241" target="_blank" >10.1186/1556-276X-7-241</a>

Result language

angličtina

Original language name

Early stages of growth of gold layers sputter deposited on glass and silicon substrates

Original language description

Extremely thin gold layers were sputter deposited on glass and silicon substrates, and their thickness and morphology were studied by Rutherford backscattering (RBS) and atomic force microscopy (AFM) methods. The deposited layers change from discontinuous to continuous ones for longer deposition times. While the deposition rate on the silicon substrate is constant, nearly independent on the layer thickness, the rate on the glass substrate increases with increasing layer thickness. The observed dependence can be explained by a simple kinetic model, taking into account different sticking probabilities of gold atoms on a bare glass substrate and regions with gold coverage. Detailed analysis of the shape of the RBS gold signal shows that in the initial stages of the deposition, the gold layers on the glass substrate consist of gold islands with significantly different thicknesses. These findings were confirmed by AFM measurements, too. Gold coverage of the silicon substrate is rather homog

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BG - Nuclear, atomic and molecular physics, accelerators

OECD FORD branch

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Project

<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nanoscale Research Letters

ISSN

1931-7573

e-ISSN

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Volume of the periodical

7

Issue of the periodical within the volume

241

Country of publishing house

US - UNITED STATES

Number of pages

7

Pages from-to

1-7

UT code for WoS article

000307252700001

EID of the result in the Scopus database

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