Laser-generated ns plasma pulses characterized using SiC Schottky diode

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F20%3A00531997" target="_blank" >RIV/61389005:_____/20:00531997 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1002/ctpp.202000012" target="_blank" >https://doi.org/10.1002/ctpp.202000012</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/ctpp.202000012" target="_blank" >10.1002/ctpp.202000012</a>

Result language
angličtina
Original language name
Laser-generated ns plasma pulses characterized using SiC Schottky diode
Original language description
The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time-of-flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 10(10) W/cm(2)and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X-rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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