Ga:La:S amorphous thin films prepared by pulsed laser depositon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F08%3A00326280" target="_blank" >RIV/61389013:_____/08:00326280 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Ga:La:S amorphous thin films prepared by pulsed laser depositon
Original language description
The amorphous galium-lanthanum-sulphide films were prepared by pulsed laser deposition method. The prepared layers were characterized in term of the structure, chemical composition and optical properties. The photosensitivity of amorphous chalcogenide was studied.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of ICTF14 and RSD2008
ISBN
978-90-334-7347-0
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
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Publisher name
Universiteit Gent
Place of publication
Gent
Event location
Gent
Event date
Nov 17, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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