Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F13%3A00392068" target="_blank" >RIV/61389013:_____/13:00392068 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.2478/s13536-013-0101-0" target="_blank" >http://dx.doi.org/10.2478/s13536-013-0101-0</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2478/s13536-013-0101-0" target="_blank" >10.2478/s13536-013-0101-0</a>
Alternative languages
Result language
angličtina
Original language name
Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots
Original language description
Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with anactive layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1104 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CD - Macromolecular chemistry
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Science-Poland
ISSN
2083-1331
e-ISSN
—
Volume of the periodical
31
Issue of the periodical within the volume
2
Country of publishing house
PL - POLAND
Number of pages
10
Pages from-to
288-297
UT code for WoS article
000317956100020
EID of the result in the Scopus database
—