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Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F24%3A00617093" target="_blank" >RIV/61389021:_____/24:00617093 - isvavai.cz</a>

  • Result on the web

    <a href="https://link.springer.com/article/10.1134/S1027451024700319" target="_blank" >https://link.springer.com/article/10.1134/S1027451024700319</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1134/S1027451024700319" target="_blank" >10.1134/S1027451024700319</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide

  • Original language description

    Abstract: A hybrid multiscale model consisting of two coupled modules is used to study the effect of irradiation temperature on the kinetics of the formation of swift heavy ions tracks in silicon carbide (6H-SiC). Excitation of the electronic and atomic subsystems of the material is simulated using the Monte Carlo TREKIS-3 code. The profile of energy transferred to the atomic lattice is used as the initial conditions for molecular-dynamics simulations (using the LAMMPS package) of structural changes in the material near the trajectory of the swift heavy ion. Using the example of Bi-ion irradiation with an energy of 710 MeV, it is found that increasing irradiation temperature leads to an increase in the energy density transferred to the lattice. This induces rapid disordering of the core structure of the track at timescales on the order of 0.25 ps. At irradiation temperatures below 1800 K, subsequent recrystallization of the amorphous region within the cooling track leads to complete restoration of the material structure. At temperatures above the threshold of 1800 K, mass transfer, determined by the ejection of dislocations from the track core, results in the formation of nanoscale voids with a diameter of approximately 3 nm along the ion trajectory. The simulation results are useful for assessing the radiation resistance of silicon carbide under extreme irradiation conditions and for formulating ideas and designing new experiments on high-temperature SiC irradiation.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10306 - Optics (including laser optics and quantum optics)

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques

  • ISSN

    1027-4510

  • e-ISSN

    1819-7094

  • Volume of the periodical

    18

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    RU - RUSSIAN FEDERATION

  • Number of pages

    7

  • Pages from-to

    683-689

  • UT code for WoS article

    001277999100006

  • EID of the result in the Scopus database

    2-s2.0-85198657720