Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F15%3A86095514" target="_blank" >RIV/61989100:27640/15:86095514 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1364/OME.5.000340" target="_blank" >http://dx.doi.org/10.1364/OME.5.000340</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OME.5.000340" target="_blank" >10.1364/OME.5.000340</a>
Alternative languages
Result language
angličtina
Original language name
Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide
Original language description
Dispersion plasmonic interaction at an interface between a doped semiconductor and a dielectric is employed to use experimental data for determining the plasma frequency, the relaxation time, the effective mass, and the mobility of free electrons in heavily donor-doped gallium arsenide (GaAs) and indium phosphide (InP). A new solution for a plasmonic resonance at a semiconductor/dielectric interface found recently is exploited advantageously when analyzing the experimental data. Two independent measurement methods were used, namely the infrared reflectivity and the Raman scattering. Results indicate a good agreement with known data while pointing to some inaccuracies reported, and suggest a new alternative and accurate means to determine these important semiconductor parameters.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Optical Materials Express
ISSN
2159-3930
e-ISSN
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Volume of the periodical
5
Issue of the periodical within the volume
2
Country of publishing house
US - UNITED STATES
Number of pages
13
Pages from-to
340-352
UT code for WoS article
000350664100015
EID of the result in the Scopus database
2-s2.0-84921750302