Dynamical and anisotropic properties of spin-VCSELs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F19%3A10239604" target="_blank" >RIV/61989100:27640/19:10239604 - isvavai.cz</a>
Alternative codes found
RIV/61989100:27740/19:10239604
Result on the web
<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10926/1092614/Dynamical-and-anisotropic-properties-of-spin-VCSELs/10.1117/12.2515288.full" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10926/1092614/Dynamical-and-anisotropic-properties-of-spin-VCSELs/10.1117/12.2515288.full</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2515288" target="_blank" >10.1117/12.2515288</a>
Alternative languages
Result language
angličtina
Original language name
Dynamical and anisotropic properties of spin-VCSELs
Original language description
Spin-polarized lasers such as spin-polarized vertical-cavity surface-emitting laser (spin-VCSELs) are prospective devices in which the radiative recombination of spin-polarized carriers results in an emission of circularly-polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity generally lead in preferential linearlypolarized laser emission and to possible coupling between modes. Optimization of room-temperature spin- VCSELs thus relies on a proper modeling method and on a good understanding of these anisotropies that may reveal (i) a local linear birefringence due to strain fields at the surface or (ii) a birefringence in quantum wells (QWs) due to phase-amplitude coupling originating from the reduction of the biaxial D2d to the C2v symmetry group at the III-V ternary semiconductor interfaces. We present a novel method for the modeling of steady-state and dynamical properties of generally anisotropic multilayer semiconductor lasers containing multiple QWs active region. In order to solve the dynamical properties of spin-VCSELs, we combine here optical Bloch equations for a 4-level system with the scattering-matrix formalism, which treats VCSELs as a multilayer structure containing classical active dipole layers [T. Fordos et al., Phys. Rev. A 96, 043828 (2017)]. The method is then demonstrated on real semiconductor laser structures with InGaAs/GaAsP quantum wells. It is used for calculation of the laser resonance condition, the polarization properties of eigenmodes, the electromagnetic-field distribution inside the laser cavity, and time-dependent properties of the emitted light.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10300 - Physical sciences
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of SPIE - The International Society for Optical Engineering. Volume 10926
ISBN
978-1-5106-2494-8
ISSN
0277-786X
e-ISSN
1996-756X
Number of pages
16
Pages from-to
1-15
Publisher name
SPIE
Place of publication
Bellingham
Event location
San Francisco
Event date
Feb 3, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000511113700016