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Direct synthesis of large-area Al-doped graphene by chemical vapor deposition: Advancing the substitutionally doped graphene family

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F21%3A10247683" target="_blank" >RIV/61989100:27710/21:10247683 - isvavai.cz</a>

  • Result on the web

    <a href="http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=21&SID=E6RN3qxLI555hWL7GaF&page=1&doc=1" target="_blank" >http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=21&SID=E6RN3qxLI555hWL7GaF&page=1&doc=1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s12274-021-3655-x" target="_blank" >10.1007/s12274-021-3655-x</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Direct synthesis of large-area Al-doped graphene by chemical vapor deposition: Advancing the substitutionally doped graphene family

  • Original language description

    Graphene doping continues to gather momentum because it enables graphene properties to be tuned, thereby affording new properties to, improve the performance of, and expand the application potential of graphene. Graphene can be chemically doped using various methods such as surface functionalization, hybrid composites (e.g., nanoparticle decoration), and substitution doping, wherein C atoms are replaced by foreign ones in the graphene lattice. Theoretical works have predicted that graphene could be substitutionally doped by aluminum (Al) atoms, which could hold promise for exciting applications, including hydrogen storage and evolution, and supercapacitors. Other theoretical predictions suggest that Al substitutionally doped graphene (AlG) could serve as a material for gas sensors and the catalytic decomposition of undesirable materials. However, fabricating Al substitutionally doped graphene has proven challenging until now. Herein, we demonstrate how controlled-flow chemical vapor deposition (CVD) implementing a simple solid precursor can yield high-quality and large-area monolayer AlG, and this synthesis is unequivocally confirmed using various characterization methods including local electron energy-loss spectroscopy (EELS). Detailed high-resolution transmission electron microscopy (HRTEM) shows numerous bonding configurations between the Al atoms and the graphene lattice, some of which are not theoretically predicted. Furthermore, the produced AlG shows a CO2 capturability superior to those of other substitutionally doped graphenes. [Figure not available: see fulltext.] (C) 2021, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20400 - Chemical engineering

Result continuities

  • Project

    <a href="/en/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institute of Environmental Technology - Excellent Research</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Nano Research

  • ISSN

    1998-0124

  • e-ISSN

  • Volume of the periodical

    15

  • Issue of the periodical within the volume

    7/2021

  • Country of publishing house

    CN - CHINA

  • Number of pages

    10

  • Pages from-to

    1310-1318

  • UT code for WoS article

    000678455000001

  • EID of the result in the Scopus database

    2-s2.0-85111273423