Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F23%3A10254123" target="_blank" >RIV/61989100:27740/23:10254123 - isvavai.cz</a>

Result on the web

<a href="https://iopscience.iop.org/article/10.1088/1674-4926/44/9/092605" target="_blank" >https://iopscience.iop.org/article/10.1088/1674-4926/44/9/092605</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1674-4926/44/9/092605" target="_blank" >10.1088/1674-4926/44/9/092605</a>

Result language

angličtina

Original language name

Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment

Original language description

The anisotropic absorption and emission from semiconductor CdSe/CdS quantum rods (QRs) provide extra benefits among other photoluminescence nanocrystals. Using photo-induced alignment technique, the QRs can be oriented in liquid crystal polymer matrix at a large scale. In this article, a 2D Dammann grating pattern, within &quot;SKL&quot; characters domains aligned QRs in composite film, was fabricated by multi-step photo exposure using several photo masks, and a continuous geometric lens profile pattern aligned QRs was realized by the single step polarization converting holographic irradiation method. Both polarized optical microscope and fluorescence microscope are employed to determine the liquid crystal director profiles and QRs anisotropic excitation properties. We have been able to orient the QRs in fine binary and continuous patterns that confirms the strong quantum rod aligning ability of the proposed method. Thus, the proposed approach paves a way for photo-induced flexible QRs alignments to provide a highly specific and difficult-to-replicate security application at a large scale.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

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Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Semiconductors

ISSN

1674-4926

e-ISSN

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Volume of the periodical

44

Issue of the periodical within the volume

9

Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

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UT code for WoS article

001074195900001

EID of the result in the Scopus database

2-s2.0-85174510107