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Removing Cadmium Impurities from Cation-Exchange-Derived CuInSe2/CuInS2 Nanorods for Enhanced Infrared Emission and Photodetection

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F24%3A10254876" target="_blank" >RIV/61989100:27740/24:10254876 - isvavai.cz</a>

  • Result on the web

    <a href="https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.202400942" target="_blank" >https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.202400942</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/adfm.202400942" target="_blank" >10.1002/adfm.202400942</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Removing Cadmium Impurities from Cation-Exchange-Derived CuInSe2/CuInS2 Nanorods for Enhanced Infrared Emission and Photodetection

  • Original language description

    Metal chalcogenide nanocrystals with variable composition and shape can conveniently be produced using cation exchange synthesis; however, the presence of cation-containing ligands inherited from the starting material often results in contamination of the final product. To address this issue, a two-step ligand replacement strategy is developed to fabricate CuInSe2/CuInS2 nanorods from CdSe/CdS nanorods via removal of Cd-phosphonates from an intermediate Cu2-xSe/Cu2-xS phase used in the cation exchange conversion. This synthetic approach furnishes CuInSe2/CuInS2 nanorods with cadmium content below 1 at.%, and high photoluminescence quantum yields reaching 40% in the near-infrared spectral range. Transient absorption studies reveal that the band alignment in the CuInSe2/CuInS2 heterostructure features a quasi-type II character, with an electron localized in the core and a hole wavefunction spread over the entire nanorod. The efficient passivation of the core and the reduced Cd content leads to excitonic emission with full width at half maximum down to 110 meV, superimposed with a broad emission band from copper-induced defects. Field-effect transistors based on cadmium-free CuInSe2/CuInS2 nanorods show two orders of magnitude lower noise current density compared with the cadmium-rich devices. The responsivity and specific detectivity of these devices reach 230 mA W-1 and 10(8) Jones, respectively, under near-infrared excitation at room temperature.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10400 - Chemical sciences

Result continuities

  • Project

  • Continuities

    V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Advanced Functional Materials

  • ISSN

    1616-301X

  • e-ISSN

    1616-3028

  • Volume of the periodical

    34

  • Issue of the periodical within the volume

    34

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    12

  • Pages from-to

  • UT code for WoS article

    001184056600001

  • EID of the result in the Scopus database

    2-s2.0-85187535229