Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F24%3A10254883" target="_blank" >RIV/61989100:27740/24:10254883 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acsami.3c19200" target="_blank" >https://pubs.acs.org/doi/10.1021/acsami.3c19200</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.3c19200" target="_blank" >10.1021/acsami.3c19200</a>
Alternative languages
Result language
angličtina
Original language name
Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors
Original language description
Chiral halide perovskite materials promise both superior light response and the capability to distinguish circularly polarized emissions, which are especially common in the fluorescence spectra of organic chiral materials. Herein, thin-film field-effect transistors (FETs) based on chiral quasi-two-dimensional perovskites are explored, and the temperature dependence of the charge carrier transport mechanism over the broad temperature range (80-300 K) is revealed. A typical p-type charge transport behavior is observed for both left-handed (S-C6H5(CN2)2NH3)2(CH3NH3)nMINUS SIGN 1PbnI3n+1 and right-handed (R-C6H5(CN2)2NH3)2(CH3NH3)nMINUS SIGN 1PbnI3n+1 chiral perovskites, with maximum carrier mobilities of 1.7 x 10-5 cm2 V-1 s-1 and 2.5 x 10-5 cm2 V-1 s-1 at around 280 K, respectively. The shallow traps with smaller activation energy (0.03 eV) hinder the carrier transport over the lower temperature regime (80-180 K), while deep traps with 1 order of magnitude larger activation energy than the shallow traps moderate the charge carrier transport in the temperature range of 180-300 K. From the charge carrier mechanism point of view, impurity scattering is established as the dominant factor from 80 K until around 280 K, while phonon scattering becomes predominant up to room temperature. Responsivities of 0.15 A W-1 and 0.14 A W-1 for left-handed and right-handed chiral perovskite FET devices are obtained.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10400 - Chemical sciences
Result continuities
Project
—
Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS applied materials & interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Volume of the periodical
16
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
12965-12973
UT code for WoS article
001177543400001
EID of the result in the Scopus database
2-s2.0-85186452021