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Tuning the properties of erbium oxide through manganese doping for enhanced optoelectronic performance

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F25%3A10259595" target="_blank" >RIV/61989100:27740/25:10259595 - isvavai.cz</a>

  • Result on the web

    <a href="https://link.springer.com/article/10.1007/s10854-025-16188-7?utm_source=getftr&utm_medium=getftr&utm_campaign=getftr_pilot&getft_integrator=scopus" target="_blank" >https://link.springer.com/article/10.1007/s10854-025-16188-7?utm_source=getftr&utm_medium=getftr&utm_campaign=getftr_pilot&getft_integrator=scopus</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s10854-025-16188-7" target="_blank" >10.1007/s10854-025-16188-7</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Tuning the properties of erbium oxide through manganese doping for enhanced optoelectronic performance

  • Original language description

    Researchers are increasingly drawn to erbium oxide (Er2O3) nanoparticles because of their attractive properties, which include luminescence, high electron mobility, optical band gap, and exceptional transparency. These qualities make them a potential choice for a range of optoelectronic applications. Using the solid-state reaction technique, it is possible to produce erbium oxide nanoparticles, both undoped and doped with 1-5% manganese (Mn). This investigation compares undoped and Mn-doped Er2O3 nanoparticles with respect to their optical, electrical, and magnetic properties. The X-ray diffraction pattern shows that the Er2O3 nanoparticles made with 5% Mn doping have a cubic crystal structure, the biggest crystallite size (60.90 nm), and less microstrain. The FTIR spectrum shows peaks at 417 cm-1 and 433 cm-1 for the Er-O stretching vibrations and at 461 cm-1 and 500 cm-1 for the Mn-O bond. The direct energy band gap for Er2O3 nanoparticles that are doped with 0-5% manganese content is confirmed by UV visible examination. As a consequence of electron-hole pair recombination, photoluminescence (PL) spectra show several emission peaks in the visible spectrum. According to the Raman investigation, the insertion of manganese into Er2O3 maintains the cubic phase while causing a modest modification to the local bonding conditions. This is demonstrated by the fact that the Tg and Eg vibrational modes remain stable. At 5% Mn doping, the magnetic study of Er2O3 nanoparticles reveals the maximum saturation magnetization of 2.686 emu/g. The highest conductivity of Er2O3 nanoparticles is observed at a doping level of 5%, while the lowest conductivity is observed at a doping level of 2%, according to electrical properties. Furthermore, it has been discovered that the work function for erbium oxide nanoparticles doped with 0 to 5 percent manganese is between 5.375 and 5.56 electron volts. The results of the study indicate that by eliminating surface imperfections, minor Mn doping in Er2O3 improves stability and raises the work function. However, greater Mn concentrations cause more defects, which may impair work function by donating electrons. This study shows that controlled Mn doping in Er2O3 nanoparticles tunes their band gap, enhances photoluminescence, and induces ferromagnetism, demonstrating their multifunctionality for optoelectronic devices. In light of all of these considerations, Mn-doped Er2O3 nanoparticles show considerable potential as a material for a range of optoelectronic applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10300 - Physical sciences

Result continuities

  • Project

  • Continuities

    O - Projekt operacniho programu

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Materials Science: Materials in Electronics

  • ISSN

    0957-4522

  • e-ISSN

    1573-482X

  • Volume of the periodical

    36

  • Issue of the periodical within the volume

    34

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    23

  • Pages from-to

    2210

  • UT code for WoS article

    001630170200001

  • EID of the result in the Scopus database

    2-s2.0-105023569137