Raman spectroscopy of strongly Raman spectroscopy of strongly doped CVD-graphene

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F13%3A33148392" target="_blank" >RIV/61989592:15310/13:33148392 - isvavai.cz</a>
Result on the web
<a href="http://onlinelibrary.wiley.com/doi/10.1002/pssb.201300070/pdf" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/pssb.201300070/pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201300070" target="_blank" >10.1002/pssb.201300070</a>

Result language
angličtina
Original language name
Raman spectroscopy of strongly Raman spectroscopy of strongly doped CVD-graphene
Original language description
Chemical vapor-deposition-grown graphene covered with a polyelectrolyte layer has been studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The doping of graphene leads to a shift of the Fermi level, which is reflected in changes of Raman spectra. A change of the Raman shift of the G band as a function of the electrode potential has been analyzed in this study to evaluate the doping level of graphene. The frequency shift of the G mode suggested an extreme doping of graphene (up 10(14) charge carriers per cm(2)), without obvious damage of graphene.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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