All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F17%3A73581544" target="_blank" >RIV/61989592:15310/17:73581544 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11320/17:10371030

  • Result on the web

    <a href="http://iopscience.iop.org/article/10.1088/1748-0221/12/05/P05003/pdf" target="_blank" >http://iopscience.iop.org/article/10.1088/1748-0221/12/05/P05003/pdf</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1748-0221/12/05/P05003" target="_blank" >10.1088/1748-0221/12/05/P05003</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)

  • Original language description

    Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 mu m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to 10(15) n(eq)/cm(2). The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of 3 x 10(14) n(eq)/cm(2), similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At 10(15) n(eq)/cm(2), the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10303 - Particles and field physics

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Instrumentation

  • ISSN

    1748-0221

  • e-ISSN

  • Volume of the periodical

    12

  • Issue of the periodical within the volume

    MAY 2017

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    17

  • Pages from-to

    "P05003-1"-"P05003-17"

  • UT code for WoS article

    000405076000003

  • EID of the result in the Scopus database

    2-s2.0-85021139521