Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F17%3A73581544" target="_blank" >RIV/61989592:15310/17:73581544 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/17:10371030
Result on the web
<a href="http://iopscience.iop.org/article/10.1088/1748-0221/12/05/P05003/pdf" target="_blank" >http://iopscience.iop.org/article/10.1088/1748-0221/12/05/P05003/pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/12/05/P05003" target="_blank" >10.1088/1748-0221/12/05/P05003</a>
Alternative languages
Result language
angličtina
Original language name
Gain and time resolution of 45 mu m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10(15) n(eq)/cm(2)
Original language description
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 mu m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to 10(15) n(eq)/cm(2). The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of 3 x 10(14) n(eq)/cm(2), similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At 10(15) n(eq)/cm(2), the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10303 - Particles and field physics
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
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Volume of the periodical
12
Issue of the periodical within the volume
MAY 2017
Country of publishing house
GB - UNITED KINGDOM
Number of pages
17
Pages from-to
"P05003-1"-"P05003-17"
UT code for WoS article
000405076000003
EID of the result in the Scopus database
2-s2.0-85021139521