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Large magnetic anisotropy in an OsIr dimer anchored in defective graphene

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15640%2F21%3A73607565" target="_blank" >RIV/61989592:15640/21:73607565 - isvavai.cz</a>

  • Alternative codes found

    RIV/61989592:15310/21:73607565

  • Result on the web

    <a href="https://iopscience.iop.org/article/10.1088/1361-6528/abe966/pdf" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6528/abe966/pdf</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1361-6528/abe966" target="_blank" >10.1088/1361-6528/abe966</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Large magnetic anisotropy in an OsIr dimer anchored in defective graphene

  • Original language description

    Single-atom magnets represent the ultimate limit of magnetic data storage. The identification of substrates that anchor atom-sized magnets firmly and, thus, prevent their diffusion and large magnetic anisotropy has been at the centre of intense research efforts for a long time. Using density functional theory we show the binding of transition metal (TM) atoms in defect sites in the graphene lattice: single vacancy and double vacancy, both pristine and decorated by pyridinic nitrogen atoms, are energetically more favourable than away from the centre of defects, which could be used for engineering the position of TMs with atomic precision. Relativistic calculations revealed magnetic anisotropy energy (MAE) of similar to 10 meV for Ir@NSV with an easy axis parallel to the graphene plane. MAE can be remarkably boosted to 50 meV for OsIr@NSV with the easy axis perpendicular to the graphene plane, which paves the way to the storage density of similar to 490 Tb/inch(2) with the blocking temperature of 14 K assuming the relaxation time of 10 years. Magnetic anisotropy is discussed based on the relativistic electronic structures. The influence of an orbital-dependent on-site Coulomb repulsion U and a non-local correlation functional optB86b-vdW on MAE is also discussed.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    21001 - Nano-materials (production and properties)

Result continuities

  • Project

    <a href="/en/project/EF16_019%2F0000754" target="_blank" >EF16_019/0000754: Nanotechnologies for Future</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    NANOTECHNOLOGY

  • ISSN

    0957-4484

  • e-ISSN

  • Volume of the periodical

    32

  • Issue of the periodical within the volume

    23

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    14

  • Pages from-to

    "230001-1"-"230001-14"

  • UT code for WoS article

    000630707800001

  • EID of the result in the Scopus database

    2-s2.0-85103581654