IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F15%3A00447032" target="_blank" >RIV/67985858:_____/15:00447032 - isvavai.cz</a>
Alternative codes found
RIV/61388980:_____/15:00447032 RIV/49777513:23640/15:43927599
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures
Original language description
Nowadays, great attention is devoted to Ge-Si-Sn ternary system, because Si1-x-yGexSny provides the potential of band gap engineering and tuning of the optical properties. IR laser irradiation of equimolar gaseous GeH4 + SiH4 + SnH4 + Ar mixture results in simultaneous decomposition of all three compounds and it allows deposition of nanostructured solid film. Analysis of the films by FTIR and Raman spectroscopy, X-ray diffraction analysis and electron microscopy revealed crystalline nanobodies of pure beta-Sn and crystalline nanoobjects of Ge1-x-ySixSny embedded in an amorphous metastable Ge-Si-Sn alloy. This process allows co-decomposition of all silicon, germanium and tin hydrides which is caused by combination of infrared multiple photon dissociation of absorbing silane and currently proceeding LIDB. This is followed by intermixing/clustering of extruded metal atoms in the gas phase.
Czech name
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Czech description
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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