Thermodynamic complexity measure for semiconductor heterostructures.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F00%3A13000085" target="_blank" >RIV/67985882:_____/00:13000085 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Thermodynamic complexity measure for semiconductor heterostructures.
Original language description
Semiconductor chips in contemporary micro- and optoelectronics are complicated objects. There are various approaches to express this complexity. The one presented here is based on the notion of the entropy of mixing and is termed the configuration entropy. It is a functional of the concentration profile and of the layer growth law. Theoretical concepts are illustrated on the concrete case of the growth of a heterostructure in the AlGaAs material system.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F99%2F0341" target="_blank" >GA102/99/0341: Effect of rare-earth elements on preparation and properties of semiconductor AIIIBV materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2000
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM 2000. Conference Proceedings of the 3rd International Euro Conference on Advanced Semiconductor Devices and Microsystems.
ISBN
0-7803-5939-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Piscataway
Event location
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Event date
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Type of event by nationality
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UT code for WoS article
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