Role of .tau.-elements in the growth of InP layers for radiation detectors.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F01%3A13010077" target="_blank" >RIV/67985882:_____/01:13010077 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Role of .tau.-elements in the growth of InP layers for radiation detectors.
Original language description
We report the effect of .tau.-elements (Er, Ho, Nd, Pr, Tb and Yb) during the LPE on the growth process and structural, electrical and optical properties of InP thick epitaxial layers for applications in ionizing radiation detector structures. Room temperature Hall effect measurements revealed p-type conductivity Tb, Pr or Yb admixture exceeding certain limiting concentration. These layers could readily be used for the preparation of .alfa.-particles detector, when detection will be mediated via the depletion layer of high quality Schottky contact.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Crystal Research and Technology
ISSN
0232-1300
e-ISSN
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Volume of the periodical
36
Issue of the periodical within the volume
8/10
Country of publishing house
DE - GERMANY
Number of pages
9
Pages from-to
979-987
UT code for WoS article
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EID of the result in the Scopus database
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