Temperature change of Hall and Seebeck coeffficient sign in InP doped with transition metals.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F04%3A13040016" target="_blank" >RIV/67985882:_____/04:13040016 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Temperature change of Hall and Seebeck coeffficient sign in InP doped with transition metals.

Original language description

Semi-insulating InP samples doped with transaction metals were grown by the Czochralski technique. Both Hall and Seebeck effect measurements show the change of Hall and Seebeck coefficient sign at low temperatures. Electron hopping between iron or titanium ions in the nearest sites is assumed to cause the change. The theoretical calculations based on the mixed conductivity model are in good agreement with experimental values.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/IBS2067354" target="_blank" >IBS2067354: X-ray detectors based on InP</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

19

Issue of the periodical within the volume

2

Country of publishing house

GB - UNITED KINGDOM

Number of pages

5

Pages from-to

203-207

UT code for WoS article

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EID of the result in the Scopus database

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