Negative feedback phenomena in InP-based hydrogen detectors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387416" target="_blank" >RIV/67985882:_____/12:00387416 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Negative feedback phenomena in InP-based hydrogen detectors

Original language description

Properties of hydrogen detectors on the basis of Pd/oxides/InP MOS structures are investigated, in particular the dependence between hydrogen pressure and the coverage of the M/O interface by adsorbed H atoms. Presence of a negative feedback mechanism isestablished in the case when enthalpy of hydrogen adsorption diminishes with coverage, as supposed by the Temkin theory. The analysis is helpful in extracting model parameter values from empirical data and promoting better understanding of the detectors

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F09%2F1037" target="_blank" >GA102/09/1037: Metallic nanolayers for semiconductor sensor and detector structures</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Optoelectronics and Advanced Materials - Rapid Communications

ISSN

1842-6573

e-ISSN

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Volume of the periodical

6

Issue of the periodical within the volume

11-12

Country of publishing house

RO - ROMANIA

Number of pages

3

Pages from-to

1089-1091

UT code for WoS article

000312611400029

EID of the result in the Scopus database

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