LOW SUPERSATURATION OVERGROWTH OF NANOPOROUS GaAs SUBSTRATES
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387722" target="_blank" >RIV/67985882:_____/12:00387722 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
LOW SUPERSATURATION OVERGROWTH OF NANOPOROUS GaAs SUBSTRATES
Original language description
Oriented pore networks in GaAs were created by electrochemical dissolution. Low supersaturation overgrowth of the porous substrates by InxGa1-xAs (x<4%) was realized by Liquid Phase Epitaxy (LPE)
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F10%2F0253" target="_blank" >GAP108/10/0253: Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
NANOCON 2012, 4th International Conference Proceedings
ISBN
978-80-87294-32-1
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
TANGER Ltd
Place of publication
Ostrava
Event location
Brno
Event date
Oct 23, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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