Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F13%3A00396793" target="_blank" >RIV/67985882:_____/13:00396793 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films
Original language description
This study deals with the influence of Er-doping level and thermal annealing on the optical properties of amorphous Ge-Ga-S thin films. Nominal compositions of (GeS2)(75)(Ga2S3)(25) doped with high concentrations of 2.1 and 2.4 mol% Er2S3 (correspondingto 1.2 and 1.4 at% Er, respectively) have been chosen for this work. The results have been related to those obtained for the un-doped samples. The values of the refractive index, the absorption coefficient and optical band gap have been determined from the transmittance data. It has been found that the optical band gap of un-doped and 2.1 mol% Er2S3-doped films slightly increases with annealing temperature, whereas at 2.4 mol% Er2S3-doping level it is decreased. The dependences of the optical parameterson the erbium concentration and effect of annealing in the temperature range of 100-200 degrees C have been evaluated and discussed in relation to possible structural changes
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GAP106%2F12%2F2384" target="_blank" >GAP106/12/2384: Special glasses on the base of heavy metal oxides</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Optoelectronics and Advanced Materials
ISSN
1454-4164
e-ISSN
—
Volume of the periodical
15
Issue of the periodical within the volume
3-4
Country of publishing house
RO - ROMANIA
Number of pages
5
Pages from-to
182-186
UT code for WoS article
000319788000009
EID of the result in the Scopus database
—