Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F14%3A00428559" target="_blank" >RIV/67985882:_____/14:00428559 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0268-1242/29/4/045017" target="_blank" >http://dx.doi.org/10.1088/0268-1242/29/4/045017</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0268-1242/29/4/045017" target="_blank" >10.1088/0268-1242/29/4/045017</a>
Alternative languages
Result language
angličtina
Original language name
Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
Original language description
Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forwardI-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LD12014" target="_blank" >LD12014: Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductor Science and Technology
ISSN
0268-1242
e-ISSN
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Volume of the periodical
29
Issue of the periodical within the volume
4
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
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UT code for WoS article
000333275600019
EID of the result in the Scopus database
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