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Photoluminescence properties of Er-doped Ge–In(Ga)–S glasses modified by caesium halides

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F17%3A00484904" target="_blank" >RIV/67985882:_____/17:00484904 - isvavai.cz</a>

  • Alternative codes found

    RIV/67985891:_____/17:00480763 RIV/60461373:22310/17:43914570

  • Result on the web

    <a href="http://dx.doi.org/10.1002/pssb.201600662" target="_blank" >http://dx.doi.org/10.1002/pssb.201600662</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/pssb.201600662" target="_blank" >10.1002/pssb.201600662</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Photoluminescence properties of Er-doped Ge–In(Ga)–S glasses modified by caesium halides

  • Original language description

    Chalcohalide Ge-In-S and Ge-Ga-S glasses modified by CsX (X = Cl, Br, and I), and doped with Er in the range from 0.1 to 0.5 at.%, have been prepared and investigated. The influence of CsX addition on their optical properties has been studied by transmission and photoluminescence spectroscopy. Nominal compositions of [Ge25In(Ga)(10)S-65](90)(CsX)(10) have been selected as host materials. The shift of the absorption edge as a function of caesium halides is observed in GeInS (CsX) system with maximum band gap observed for CsI. The low-temperature photoluminescence reveals the broad band luminescence of the host glass centered at around the half of the band gap energy with superimposed 4f-4f radiative transitions of Er3+ ions. The position of the broad luminescence band is considerably shifted to higher energy in the case of CsI ascompared to CsCl and CsBr. In the case of Er-doped chalcohalide (Ge25Ga10S65)(90)(CsBr)(10) system, a considerable narrowing of I-4(13/2) -> I-4(15/2) radiative transitions of Er3+ ions accompanied by the pronounced splitting of the emission sub-bands clearly documents the increasing ceramics-like nature in the host material due to the admixture of CsBr. The influence of CsBr concentration on the shape of the broad-band luminescence of Ge-Ga-S-CsBr host is also reported

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20504 - Ceramics

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Status Solidi B-Basic Solid State Physics

  • ISSN

    0370-1972

  • e-ISSN

  • Volume of the periodical

    254

  • Issue of the periodical within the volume

    6

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    6

  • Pages from-to

  • UT code for WoS article

    000403292300015

  • EID of the result in the Scopus database

    2-s2.0-85014111706