Design of a broadband polarization controller based on silicon nitride-loaded thin-film lithium niobate

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F23%3A00580463" target="_blank" >RIV/67985882:_____/23:00580463 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/23:00368657 RIV/00216305:26210/23:PU149827
Result on the web
<a href="https://doi.org/10.1364/OE.501411" target="_blank" >https://doi.org/10.1364/OE.501411</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OE.501411" target="_blank" >10.1364/OE.501411</a>

Result language
angličtina
Original language name
Design of a broadband polarization controller based on silicon nitride-loaded thin-film lithium niobate
Original language description
A novel design of a polarization controller based on “etch-less” Si3N4-loaded thin film LiNbO3 is described. Broadband operation in the spectral range between 1.45 and 1.65 µm is achieved by using a mode evolution TM/TE splitter/converter, two mode evolution 3-dB couplers, and two electro-optic phase shifters. Numerical simulations show that the on-chip insertion loss should not exceed 1 dB. A single TE-mode output can be adjusted by applying control voltages lower than 10 V for an arbitrary input polarization state
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
<a href="/en/project/EF16_019%2F0000778" target="_blank" >EF16_019/0000778: Center for advanced applied science</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)