Perspectives of miniaturization of β-Ga2O3 devices with graphene electrodes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F24%3A00586971" target="_blank" >RIV/67985882:_____/24:00586971 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S1369800124002397?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800124002397?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2024.108343" target="_blank" >10.1016/j.mssp.2024.108343</a>
Alternative languages
Result language
angličtina
Original language name
Perspectives of miniaturization of β-Ga2O3 devices with graphene electrodes
Original language description
Micrometer-scale circular graphene/8-Ga2O3 structures are fabricated by transferring graphene layers to (201) and (010) bulk gallium oxide substrates. Focused ion beam etching is used to downscale the area of the graphene/8-Ga2O3 junctions, and a nanoprobe-based approach is employed for their electrical characterization in the chamber of the scanning electron microscope. Using this approach, the impact of defects in graphene on the electrical characteristics of the junctions is suppressed. A significant difference between the structures fabricated on (201) and (010) gallium oxide surfaces is further demonstrated. By numerical fitting of the measured data, several electric charge transport mechanisms are distinguished depending on the applied bias and orientation of the gallium oxide surface.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GA20-24366S" target="_blank" >GA20-24366S: Study of charge transport mechanisms in graphene-semiconductor junctions</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Science in Semiconductor Processing
ISSN
1369-8001
e-ISSN
1873-4081
Volume of the periodical
176
Issue of the periodical within the volume
15 Jun
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
108343
UT code for WoS article
001224765500001
EID of the result in the Scopus database
2-s2.0-85188454418