Polarity impacts the electrical properties of CuI/ZnO heterojunctions

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00638463" target="_blank" >RIV/67985882:_____/25:00638463 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/25:00638463
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S136980012500407X?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S136980012500407X?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2025.109670" target="_blank" >10.1016/j.mssp.2025.109670</a>

Result language
angličtina
Original language name
Polarity impacts the electrical properties of CuI/ZnO heterojunctions
Original language description
Transparent electronics represents a rapidly evolving field of research with numerous applications, including solar cells, photodetectors, thermoelectric devices, and flat panel displays. Utilization of wide-bandgap semiconductors, such as CuI and ZnO, in transparent electronics demonstrates considerable potential. The quality of the interface between CuI and ZnO is determined by various factors, and is crucial for the fabrication of high-quality heterojunctions. This study examines how surface polarity in ZnO influences the interface quality in such heterojunctions. It is experimentally demonstrated that the distinct interactions between CuI and the O-or Zn-polar faces of ZnO induce an uneven development of interface imperfections. CuI deposition on the Zn-polar face of bulk ZnO and ZnO nanorods results in a lower quality heterojunction with a reduced rectification ratio and an increased ideality factor. On the contrary, a lower density of states is observed for the O-polar face, which is reflected in the decreased ideality factor and increased rectification ratio for the CuI/ZnO heterojunction
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering

Project
<a href="/en/project/GA23-05915S" target="_blank" >GA23-05915S: Electric charge transport in heterostructures of semiconductor oxides with copper halides</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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