Diamond growth on silicon and WC-Co by microwave plasma chemical vapor deposition.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F03%3A07033140" target="_blank" >RIV/68081723:_____/03:07033140 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Diamond growth on silicon and WC-Co by microwave plasma chemical vapor deposition.

Original language description

We studied the growth of microcrystalline diamond films on pre-treated Si and WC-Co substrates by microwave plasma chemical vapor deposition.We observed the interesting time dependence of the negative bias voltage during nucleation stage which is usefulfor nucleation process monitoring. The layers were analysed by Raman spectroscopy, scanning electron microscopy and atomic force microscopy.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/IBS2041105" target="_blank" >IBS2041105: Surfaces and interfaces in structural materials - applications of modern technologies and computer modelling</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

WDS'03 Proceedings of contributed papers.

ISBN

80-86732-18-5

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

341-346

Publisher name

MATFYZPRESS

Place of publication

Praha

Event location

Praha [CZ]

Event date

Jun 10, 2003

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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